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IRF530 Power MOSFET

0.45 د.ك

IRF530 third generation power MOSFETs

In stock

SKU: EIT-COM-S-224 Category: Tags:

Description

IRF530 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Features:-

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 100V
Continuous Drain Current (Id) 5.6A
Drain-Source Resistance (Rds On) 540mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 8.3 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 43W